| 摘要 |
Forming conformal platinum-zinc films for semiconductor devices is described. In one example, a conformal film is formed by heating a substrate in a reaction chamber, exposing a desired region of the substrate to a precursor that contains platinum, purging excess precursor from the chamber, exposing the desired region of the substrate to a co-reactant containing zinc to cause a reaction between the precursor and the co-reactant to form a platinum zinc film on the desired region, and purging the chamber of excess reaction by-products. |
