发明名称 |
Method for forming strained layer with high Ge content on substrate and semiconductor structure |
摘要 |
A semiconductor structure and a method for forming the same are provided. The semiconductor structure may comprise a substrate (110); an insulation layer (120) formed on the substrate (110); a strained layer (130) formed on the insulation layer (120); a strained layer (140) with high Ge content formed on the strained layer (130); and a gate stack (160) formed on the strained layer (140) with high Ge content. |
申请公布号 |
US8440550(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201013126730 |
申请日期 |
2010.11.29 |
申请人 |
WANG JING;XU JUN;GUO LEI;TSINGHUA UNIVERSITY |
发明人 |
WANG JING;XU JUN;GUO LEI |
分类号 |
H01L29/78;H01L21/20;H01L21/265 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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