发明名称 |
Methods of forming semiconductor memory devices having vertically stacked memory cells therein |
摘要 |
Methods of forming vertical nonvolatile memory devices utilize carbon-blocking sacrificial capping layers to increase device yield by reducing the likelihood that one or more vertically-stacked layers of materials will lift-off during fabrication. These capping layers may be provided to cover carbon-containing sacrificial layers that are highly polymerized. |
申请公布号 |
US8440531(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201213448582 |
申请日期 |
2012.04.17 |
申请人 |
HAN TAE-JONG;KIM DAEWOONG;JANG KYUNG-TAE;KIM BONGCHEOL;KWON OHCHEL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN TAE-JONG;KIM DAEWOONG;JANG KYUNG-TAE;KIM BONGCHEOL;KWON OHCHEL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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