| 摘要 |
PURPOSE: A plasma supply unit and substrate processing apparatus containing the same are provided to minimize particle generation due to ion infiltration by minimizing the infiltration of positive ions contained in plasma into a chamber wall. CONSTITUTION: A plasma supply unit(300) includes a plasma chamber(310), a source gas supply part(320), a power applying part(330), and an inflow duct(340). The plasma chamber forms a discharge space to which source gas is supplied. The power applying part applies high-frequency power to the discharge space and discharges source gas. The inflow duct is connected with the discharge space and has an inflow space for source gas. The inner wall of the plasma chamber forming the discharge space is made of a first material. The inner wall of the diffusion duct forming the inflow space is made of a second material different from the first material.
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