| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent the generation of a bowing profile in the sidewall of a storage node hole by forming a second sacrificial layer. CONSTITUTION: A mold layer including a first sacrificial layer(33) and a second sacrificial layer(34) is formed on a substrate(31). An insulating layer pattern with etching selectivity is formed on the mold layer. The mold layer is etched using an etch barrier wall as the insulating layer pattern to form a storage node hole(36). A storage node conduction layer is formed on the front surface of a structure including the insulating layer pattern. A storage node separation process is performed to form a storage node(37A).
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