| 摘要 |
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing (100) platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing (102) platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming (104) a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating (105) the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.
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