发明名称 |
Threshold adjustment for MOS devices by adapting a spacer width prior to implantation |
摘要 |
Different threshold voltages of transistors of the same conductivity type in a complex integrated circuit may be adjusted on the basis of different Miller capacitances, which may be accomplished by appropriately adapting a spacer width and/or performing a tilted extension implantation. Thus, efficient process strategies may be available to controllably adjust the Miller capacitance, thereby providing enhanced transistor performance of low threshold transistors while not unduly contributing to process complexity compared to conventional approaches in which threshold voltage values may be adjusted on the basis of complex halo and well doping regimes. |
申请公布号 |
US8440534(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201113104474 |
申请日期 |
2011.05.10 |
申请人 |
GRIEBENOW UWE;HOENTSCHEL JAN;FROHBERG KAI;BERTHOLD HEIKE;REICHE KATRIN;FEUSTEL FRANK;RUTTLOFF KERSTIN;ADVANCED MICRO DEVICES, INC. |
发明人 |
GRIEBENOW UWE;HOENTSCHEL JAN;FROHBERG KAI;BERTHOLD HEIKE;REICHE KATRIN;FEUSTEL FRANK;RUTTLOFF KERSTIN |
分类号 |
H01L21/336;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|