发明名称 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR SYSTEM
摘要 PURPOSE: A semiconductor memory device and a semiconductor system are provided to store defect information about the semiconductor memory device even though a skew is generated due to the change of PVT. CONSTITUTION: A test circuit(1) applies a write command and data for a write operation and a read command for a read operation, and receives output data according to the read operation. A semiconductor memory device(2) stores the data in a memory cell in response to the write command and stores data with defect information in response to the read command. The data with the defect information is stored by synchronizing with a pulse generated when the level of the data with the defect information is shifted. [Reference numerals] (1) Test circuit; (2) Semiconductor memory device
申请公布号 KR20130049658(A) 申请公布日期 2013.05.14
申请号 KR20110114799 申请日期 2011.11.04
申请人 SK HYNIX INC. 发明人 KANG, TAE JIN
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址