| 摘要 |
PURPOSE: An etching solution composition is provided to have excellent etching performance, to minimize etching of a tungsten-based metal, thereby selectively etching metals in manufacturing a semiconductor device. CONSTITUTION: A nitride titan film etching composition comprises 0.5-3 weight% of nitric acid, 0.5-3 weight% of fluoroboric acid, 0.005-2 weight% of oxidant, 0.1-5 weight% of organic acid, and residual deionized water. The organic acid is one selected from carboxylic acid group-containing organic acid, sulfonate group-containing organic acid, carboxylic group-containing polyacid, and mixtures thereof. A manufacturing method of an electronic device comprises a step of etching the nitride titan film etching composition. [Reference numerals] (AA) Deposit W on TiN(substrate/oxide/TiN/W structure); (BB) W etching: Generate a non-uniform layer to the TiN layer; (CC) TiN etching: Etching by adjusting balance to the W layer
|
