ETCHING SOLUTION COMPOSITION FOR A TUNGSTEN LAYER AND METHOD FOR ETCHING THE TUNGSTEN LAYER USING THE SAME

摘要

PURPOSE: An etching solution composition for a tungsten layer and a method for etching the tungsten layer using the same are provided to maintain etched amount regardless of dip time and to selectively etch metals to manufacture a semiconductor device. CONSTITUTION: An etching solution composition for a tungsten layer is composed of 1-5 wt.% of oxidizing agent, 3-8 wt.% of unsaturated dicarboxylic acid compound, and the rest of deionized water. The oxidizing agent is hydrogen peroxide or persulfate compound. The persulfate compound is composed of one or more selected from ammonium persulfate, sodium persulfate, and potassium persulfate.