METAL ORGANIC PRECURSOR FOR DEPOSITION OF SILICON CONTAINING THIN FILM

摘要

PURPOSE: A silicon precursor compound for thin film deposition containing silicon is provided to reduce semiconductor manufacturing cost by not requiring or requiring small amount of plasma or catalyst for forming silicon dioxide films at low temperature like 400 deg. Celsius or less. CONSTITUTION: A silicon precursor compound is represented by chemical formula 10, 11 or 14. In the chemical formula 10, R1 - R4 are one or more respectively selected from a group including H and C1-C4 linear or branched hydrocarbons. In the chemical formula 11, R1 - R4 are one or more respectively selected from H and C1-C4 linear or branched hydrocarbons. In the chemical formula 14, R1 and R2 are one or more respectively selected from a group consisting of H, and C1-C4 linear or branched alcohol and C1-C4 linear or branched hydrocarbons.