发明名称 Stacked semiconductor device and method of connection test in the same
摘要 A stacked semiconductor device includes a first semiconductor device equipped with a first semiconductor chip 14 having a transistor circuit and protection diodes, and a second semiconductor device equipped with a second semiconductor chip 24 having a transistor circuit and protection diodes, and stacked on the first semiconductor device via a connection portion, wherein a power supply line connected to the first and second semiconductor chips is used in common, and a forward ON voltage of the protection diodes of the first semiconductor chip is set higher than a forward ON voltage of the protection diodes of the second semiconductor chip 24. When a connection test is executed, the forward ON voltage of the protection diodes of the first semiconductor chip or the second semiconductor chip is detected and then normal/open is judged.
申请公布号 US8441278(B2) 申请公布日期 2013.05.14
申请号 US20100882615 申请日期 2010.09.15
申请人 YAMANISHI NORIO;KUROSAKA SHINOBU;SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 YAMANISHI NORIO;KUROSAKA SHINOBU
分类号 G01R31/02 主分类号 G01R31/02
代理机构 代理人
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