发明名称 Nonvolatile memory apparatus capable of reducing current consumption and related driving method
摘要 Various exemplary embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the memory apparatus may include: a page buffer; an even bit line connected to the page buffer; an odd bit line connected to the page buffer; an even memory cell string installed on the even bit line; an odd memory cell string installed on the odd bit line; and a bit line select unit configured to selectively generate a signal read path between the even bit line and the even memory cell string or between the odd bit line and the odd memory cell string.
申请公布号 US8441854(B2) 申请公布日期 2013.05.14
申请号 US20100968192 申请日期 2010.12.14
申请人 YOON EUI SANG;PARK YOUNG SOO;KIM JAE YUN;SK HYNIX INC. 发明人 YOON EUI SANG;PARK YOUNG SOO;KIM JAE YUN
分类号 G11C16/04;G11C7/10;G11C16/06 主分类号 G11C16/04
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