发明名称 |
Nonvolatile memory apparatus capable of reducing current consumption and related driving method |
摘要 |
Various exemplary embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the memory apparatus may include: a page buffer; an even bit line connected to the page buffer; an odd bit line connected to the page buffer; an even memory cell string installed on the even bit line; an odd memory cell string installed on the odd bit line; and a bit line select unit configured to selectively generate a signal read path between the even bit line and the even memory cell string or between the odd bit line and the odd memory cell string. |
申请公布号 |
US8441854(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20100968192 |
申请日期 |
2010.12.14 |
申请人 |
YOON EUI SANG;PARK YOUNG SOO;KIM JAE YUN;SK HYNIX INC. |
发明人 |
YOON EUI SANG;PARK YOUNG SOO;KIM JAE YUN |
分类号 |
G11C16/04;G11C7/10;G11C16/06 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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