发明名称 |
Semiconductor device and driving method of semiconductor device |
摘要 |
An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided. |
申请公布号 |
US8441841(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201113027546 |
申请日期 |
2011.02.15 |
申请人 |
NAGATSUKA SHUHEI;KATO KIYOSHI;MATSUZAKI TAKANORI;INOUE HIROKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
NAGATSUKA SHUHEI;KATO KIYOSHI;MATSUZAKI TAKANORI;INOUE HIROKI |
分类号 |
G11C11/24 |
主分类号 |
G11C11/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|