发明名称 |
Semiconductor device and fabrication method thereof |
摘要 |
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
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申请公布号 |
US8440484(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201213531149 |
申请日期 |
2012.06.22 |
申请人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;KUSUYAMA YOSHIHIRO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;KUSUYAMA YOSHIHIRO |
分类号 |
H01L21/00;H01L29/43;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L21/8234;H01L21/84;H01L27/088;H01L27/12;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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