| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to etch a final pattern by using a nitride layer pattern as an etch barrier in an SPT(Spacer Patterning Technology) and to easily form the area of an active region. CONSTITUTION: A nitride layer and a mask layer are formed on a semiconductor substrate(300) including a cell region and a peripheral circuit(Peri) region. A space pattern is formed in the upper part of the mask layer in the cell region. An SOC layer and a silicon nitride layer are formed in the mask layer and the upper part of the space pattern. The mask layer and the silicon nitride layer are etched using an etch mask as a peripheral circuit region mask and the space pattern to form a nitride pattern(315). The semiconductor substrate is etched using an etch mask as a separated nitride pattern to form a micro pattern.</p> |
