| 摘要 |
PURPOSE: A semiconductor memory device, a division program control circuit, and a programming method thereof are provided to accurately perform a program operation by reducing a peak current. CONSTITUTION: A program pulse generating unit(100) generates a write control signal and a program completion signal in response to a programming enable signal. A division program control circuit(200) generates a division programming enable signal according to the number of program division operations in response to the program completion signal. A controller(300) generates the programming enable signal in response to the division programming enable signal. [Reference numerals] (100) Program pulse generating unit; (200) Division program control circuit; (300) Controller; (400) Write driver; (500) Memory unit |
