发明名称 |
Semiconductor integrated circuit device |
摘要 |
The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.
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申请公布号 |
US8441843(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201113317846 |
申请日期 |
2011.10.31 |
申请人 |
MAEDA NORIAKI;SHINOZAKI YOSHIHIRO;YAMAOKA MASANAO;SHIMAZAKI YASUHISA;ISODA MASANORI;NII KOJI;RENESAS ELECTRONICS CORPORATION |
发明人 |
MAEDA NORIAKI;SHINOZAKI YOSHIHIRO;YAMAOKA MASANAO;SHIMAZAKI YASUHISA;ISODA MASANORI;NII KOJI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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