发明名称 |
Semiconductor structures using replacement gate and methods of manufacture |
摘要 |
An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region.
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申请公布号 |
US8440519(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20100778319 |
申请日期 |
2010.05.12 |
申请人 |
ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;PETERSON KIRK D.;RANKIN JED H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ELLIS-MONAGHAN JOHN J.;GAMBINO JEFFREY P.;PETERSON KIRK D.;RANKIN JED H. |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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