| 摘要 |
A memory arrangement is provided having a plurality of memory elements, the elements being associated with a memory space that can be addressed in a row and column fashion during a write or a read access. The memory arrangement further includes a first macro bank comprising a first plurality of memory cells comprising a first subset of the memory elements and a second macro bank comprising a second plurality of memory cells comprising a second subset of the memory elements. The memory arrangement further includes an address resolution stage for addressing the memory cells in the respective macro banks. The memory cells are arranged so that the memory space is partitioned into a plurality of non-overlapping basic matrices, whereby each basic matrix is mapped to a given macro bank and wherein the memory cells are arranged logically so that the memory space is partitioned into a plurality of non-overlapping logic matrices of a given size, each logic matrix being of a size equal or larger than a basic matrix. |
