| 摘要 |
A semiconductor memory device according to an embodiment includes: a cell array block having, above a semiconductor substrate, a plurality of first and second wirings intersecting with one another, and a plurality of memory cells, the first and second wirings being separately formed in a plurality of layers in a perpendicular direction to the semiconductor substrate; and a first via wiring, connecting the first wiring in an n1-th layer of the cell array block with the first wiring in an n2-th layer, the semiconductor substrate or another metal wiring, and extending in a laminating direction of the cell array block. The first via wiring has a cross section orthogonal to the laminating direction of the cell array block. The cross section has an elliptical shape and a longer diameter in a direction perpendicular to the first wiring direction. |
