发明名称 |
Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same |
摘要 |
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device includes a phase change pattern and a heating electrode contacted with the phase change pattern. The heating electrode includes a smart heating electrode such that the smart heating layer is formed of a conduction material that exhibits an increase in resistance as a function of an increase in temperature, i.e., a positive temperature dependent resistivity. |
申请公布号 |
US8440991(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20090647193 |
申请日期 |
2009.12.24 |
申请人 |
PARK HAE CHAN;LEE SE HO;HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK HAE CHAN;LEE SE HO |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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