发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 <p>PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to reduce manufacturing costs and processes by omitting a separate color filter layer. CONSTITUTION: At least part of an active layer is overlapped with a gate electrode. A source electrode and a drain electrode are formed at both sides on the active layer respectively. A pixel electrode(118) is connected to the drain electrode. A protection layer is formed in the front surface of a substrate to cover the source electrode, the drain electrode, and the pixel electrode. The pixel electrode is formed by doping a coloring material(118b) into a conductive nanowire(118a).</p>
申请公布号 KR20130049337(A) 申请公布日期 2013.05.14
申请号 KR20110114287 申请日期 2011.11.04
申请人 LG DISPLAY CO., LTD. 发明人 KIM, CHUL HONG;CHAE, GEE SUNG;KIM, JIN WUK;KIM, JOON KI
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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