发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A thin film transistor substrate and a method for fabricating the same are provided to reduce manufacturing costs and processes by omitting a separate color filter layer. CONSTITUTION: At least part of an active layer is overlapped with a gate electrode. A source electrode and a drain electrode are formed at both sides on the active layer respectively. A pixel electrode(118) is connected to the drain electrode. A protection layer is formed in the front surface of a substrate to cover the source electrode, the drain electrode, and the pixel electrode. The pixel electrode is formed by doping a coloring material(118b) into a conductive nanowire(118a).</p> |
申请公布号 |
KR20130049337(A) |
申请公布日期 |
2013.05.14 |
申请号 |
KR20110114287 |
申请日期 |
2011.11.04 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
KIM, CHUL HONG;CHAE, GEE SUNG;KIM, JIN WUK;KIM, JOON KI |
分类号 |
G02F1/136;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|