| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an acoustic wave device that has sufficient strengh while achieving a low profile, and is less susceptible to occurrence of ripple in a passband and out-of-band attenuation deterioration. <P>SOLUTION: An acoustic wave device comprises: a piezoelectric substrate 21; and first and second acoustic wave resonators 22 and 23 disposed on a main surface of the piezoelectric substrate 21 at the same power flow angle being different from zero. The first and second acoustic wave resonators 22 and 23 respectively include: a pair of reflectors; an IDT disposed between the pair of reflectors; and an intersection part at which electrode fingers of a comb electrode constituting the IDT intersect each other. A first region and a second region are disposed so as to at least partially overlap with each other. The first region is a region obtained by extending the intersection part of the first acoustic wave resonator in a propagation direction of a phase velocity of the first acoustic wave resonator. The second region is a region obtained by extending the intersection part of the second acoustic wave resonator in a propagation direction of a phase velocity of the second acoustic wave resonator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
