发明名称 |
INDUCTIVE COUPLING PLASMA SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inductive coupling plasma reactor having an enclosure where at least part of the ceiling forms a dielectric window. <P>SOLUTION: A substrate support 215 is disposed within an enclosure 200 below a dielectric window 207. An RF power applicator 240 is disposed above the dielectric window to apply RF power through the dielectric window into the enclosure. A plurality of gas injectors 230, 235 are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle 270 is disposed inside the enclosure and disposed above the substrate support but below the plurality of gas injectors so as to restrict the flow of the processing gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013089972(A) |
申请公布日期 |
2013.05.13 |
申请号 |
JP20120231630 |
申请日期 |
2012.10.19 |
申请人 |
ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI |
发明人 |
GANG SHI;XU SONG LIN;NI TUCHIAN |
分类号 |
H01L21/3065;C23C16/455;C23C16/507;H01L21/205;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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