发明名称 INDUCTIVE COUPLING PLASMA SOURCE DESIGN FOR PLASMA UNIFORMITY AND EFFICIENCY ENHANCEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide an inductive coupling plasma reactor having an enclosure where at least part of the ceiling forms a dielectric window. <P>SOLUTION: A substrate support 215 is disposed within an enclosure 200 below a dielectric window 207. An RF power applicator 240 is disposed above the dielectric window to apply RF power through the dielectric window into the enclosure. A plurality of gas injectors 230, 235 are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle 270 is disposed inside the enclosure and disposed above the substrate support but below the plurality of gas injectors so as to restrict the flow of the processing gas. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013089972(A) 申请公布日期 2013.05.13
申请号 JP20120231630 申请日期 2012.10.19
申请人 ADVANCED MICRO FABRICATION EQUIPMENT INC SHANGHAI 发明人 GANG SHI;XU SONG LIN;NI TUCHIAN
分类号 H01L21/3065;C23C16/455;C23C16/507;H01L21/205;H05H1/46 主分类号 H01L21/3065
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