发明名称 METHOD OF CONTROLLING DIAMETER OF SINGLE CRYSTAL INGOT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of controlling the diameter of single crystals which enable to control, with high precision, the diameter of an ingot to be produced. <P>SOLUTION: The method of controlling the diameter of single crystal ingots includes measuring the diameter of an ingot 1 being drawn up vertically in an oven 22 through a window 23 for checking visually the state of the inside of the oven and correcting production conditions on the basis of the obtained diameter data. The window 23 for checking visually the state of the inside of the oven is arranged at such a position and an angle as to check visually molten surfaces of a molten raw material within a crucible 21, and the results of the correction of production conditions based on the first diameter data obtained on the molten surfaces may be inspected on the basis of the second diameter data obtained at an upper position with a specified vertical interval from the molten surface. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013087039(A) 申请公布日期 2013.05.13
申请号 JP20110231527 申请日期 2011.10.21
申请人 FTB RESEARCH INSTITUTE CO LTD;MITSUBISHI MATERIALS TECHNO CORP 发明人 HORIOKA YUKICHI;KAJIWARA JIRO
分类号 C30B15/22 主分类号 C30B15/22
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