SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce the number of dislocations remaining in an epitaxial layer.

SOLUTION: A semiconductor device comprises a second epitaxial layer 200 epitaxially grown on a first epitaxial layer 100. The first epitaxial layer 100 includes an epitaxial growth layer 110 and a defect layer 120. The defect layer 120 is positioned on the epitaxial growth layer 110 and in a surface layer of the first epitaxial layer 100. A defect density of the defect layer 120 is 5×1017cm-2and over. Defects which penetrate the defect layer 120 form a loop inside the second epitaxial layer 200.

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