| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase an area ratio occupied by a pixel region with respect to a chip area in a MOS-type solid-state imaging element. <P>SOLUTION: Provided is a solid-state imaging apparatus in which substrates from a first substrate 10 to an n-th (n is an integer of 2 or more) substrate are electrically connected via connecting portions and laminated in stages. An m-th (m is an integer of 1 or more and n or less) substrate includes a pixel region 50 having pixels including a photoelectric conversion element, and substrates other than the m-th substrate includes a first vertical scanning circuit 160 and a second vertical scanning circuit 161 each having a circuit element provided for driving pixels, and at least a part of the first vertical scanning circuit 160 and the second vertical scanning circuit 161 is arranged in an overlap region 51, which is overlapped with the pixel region in a vertical direction, out of a region of the other substrates . <P>COPYRIGHT: (C)2013,JPO&INPIT |
