| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas barrier film capable of attaining high gas barrier performance and high gas barrier performance stability (heat and humidity resistance and bending resistance), a method of manufacturing the gas barrier film, and an electronic device using the gas barrier film. <P>SOLUTION: The gas barrier film includes, on a resin base 4, (1) a first stress buffer layer 3 made of an evaporated film of 1.0-3.0 in relative etching rate of etching in a film thickness direction by a sputtering method, when an etching rate of an SiO<SB POS="POST">2</SB>thermal oxide film is 1.0; (2) a barrier layer 2 of 1.1-2.5 formed by subjecting a coating film containing polysilazane to modification processing; and (3) a protection layer 1 of 1.0-3.0 in this order. <P>COPYRIGHT: (C)2013,JPO&INPIT |
