| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which reduces variation in etching depth within a substrate, which is caused by faceting of a hard mask in etching a semiconductor substrate. <P>SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming insulating layers (10 and 11) and a material layer that is removable by ashing, on a semiconductor substrate 1; patterning the material layer; first etching for etching the insulating layer to penetrate therethrough and for etching at least a part of the semiconductor substrate, by using the patterned material layer as a mask; temporarily stopping the etching before the material layer is exhausted, and removing the remaining material layer (12) by ashing; and second etching for etching the semiconductor substrate to a predetermined depth by using the insulating layer as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
