SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that allows suppressing a leakage current between electrodes and to provide a method of manufacturing the same.

SOLUTION: A termination region TM surrounds an element region CL in a plan view. Heat etching is performed on a first side of a silicon carbide substrate SB so that a side wall ST having a surface orientation of ä0-33-8} or ä0-11-4} and a bottom surface BT having a surface orientation of ä000-1} are formed on the silicon carbide substrate SB in the termination region. An insulating film 8T is formed on the side wall ST and the bottom surface BT. In the element region CL, a first electrode 12 is formed on the first side of the silicon carbide substrate SB. A second electrode 14 is formed on a second side of the silicon carbide substrate SB.

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