| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low-cost power semiconductor device which can be used in a high temperature environment, and has an aluminum wire with Gd element added thereto, and to provide a method of manufacturing the power semiconductor device. <P>SOLUTION: Provided are a low-cost power semiconductor device which can withstand a high-temperature environment of 200°C or higher and has a Gd-added aluminum wire (wire 10), and a method of manufacturing the power semiconductor device. The method comprises: using a bonding wire (wire 10) made of aluminum with a trace of Gd element added thereto; performing a thermal aging treatment at a temperature of 200-400°C on a bonding connection portion 10a; and thereafter slowly cooling it at a cooling rate of 1°C/min or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
