| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a protective element of an emitter-base short-circuit type having a high hold voltage. <P>SOLUTION: A semiconductor device 1 includes: a substrate 10; a first-conductivity-type semiconductor layer 11 that is formed on the substrate; a first-conductivity-type buried layer 13 that is formed between the substrate and the semiconductor layer; a second-conductivity-type well 14 that is formed on the semiconductor layer; a first-conductivity-type first contact layer 15 that is positioned on the semiconductor layer, is spaced apart from the well, and is formed directly above the buried layer; a second-conductivity-type second contact layer 16 that is formed on the well; a first-conductivity-type third contact layer 17 that is positioned on the well and is formed between the first contact layer and the second contact layer; and a first-conductivity-type deep layer 18 that is formed between the buried layer and the first contact layer and is in contact with the first contact layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
