| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a highly-reliable BSV-type TSV. <P>SOLUTION: A semiconductor device according to one embodiment has: a semiconductor substrate 11 having a front face and a rear face and on whose front face side an LSI is formed; an insulating layer 12 formed in the semiconductor substrate 11 on the front face side and having an opening; a conductive layer 13 formed on the opening on the front face side and connected with the LSI; and a via 17 connected with the conductive layer 13 via the opening from the rear face side. A size of the via 17 is larger than the size of the opening in a range from the rear face to an interface between the semiconductor substrate 11 and the insulating layer 12, and equal to the size of the opening in the opening. <P>COPYRIGHT: (C)2013,JPO&INPIT |
