发明名称 CONTACT PROBE FOR POWER SEMICONDUCTOR MEASUREMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a contact probe for power semiconductor measurement which is structured simple, small-sized and capable of precise electric characteristic inspection. <P>SOLUTION: A contact probe 1 for power semiconductor measurement comprises a cylindrical sleeve 2, a plunger contact 3 which is fitted to be freely slidable inside the sleeve 2, and a coil spring 4 which energizes the plunger contact 3 toward an external connection terminal of a power semiconductor. The contact side of the plunger contact 3 is press-fitted and fixed into a movable bearing 5, and the non-contact side thereof is inserted to be freely slidable through a fixed bearing 6. The plunger contact 3 is made freely slidable within the sleeve 2 by the movable bearing 5 and the fixed bearing 6, and the coil spring 4 is disposed between the movable bearing 5 and the fixed bearing 6 while being mounted to the plunger contact 3. The coil spring 4 is then electrically insulated with respect to the sleeve 2, the plunger contact 3, the movable bearing 5 and the fixed bearing 6. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013088245(A) 申请公布日期 2013.05.13
申请号 JP20110227933 申请日期 2011.10.17
申请人 KIYOTA SEISAKUSHO:KK 发明人 KIYOTA SHIGEO
分类号 G01R1/067;G01R31/26;H01L21/66 主分类号 G01R1/067
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