发明名称 |
METHOD FOR MANUFACTURING THERMOELEMENT CONTAINING n-In4Se3 |
摘要 |
A method for producing a containing n-InSeincludes formation of branches from thermoelectric material of n-and p-types, application on faces of thermoelectric branches antidiffusion and commutation structures, commutation of the n-type and p-type branches. Processes of formation of the branches from thermoelectric material n-InSe, application of antidiffusion and transfer layers are realized in one stage using a method of vacuum hot pressing powders of corresponding material. The contacting layers on the faces of branches with antidiffusion layers are applied using a galvanic method from corresponding electrolyte solutions. Commutation of the n-type and p-type branches are made using metal plates via diffusion welding thereof with the contacting layers pre-deposited to the antidiffusion layer for temperature decreasing. |
申请公布号 |
UA79960(U) |
申请公布日期 |
2013.05.13 |
申请号 |
UA20120012353U |
申请日期 |
2012.10.29 |
申请人 |
THERMOELECTRICS INSTITUTE OF NAS AND MESYS OF UKRAINE |
发明人 |
MYKHAILOVSKYI VILIUS YAROSLAVOVYCH;MOCHERNIUK ROMAN MYKOLAIOVYCH;KIM SANG IL;LEE KYUHYOUNG |
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