A second cell (CL2) is adjacent in the cell width direction to a first cell (CL1) which has N times the cell height of a reference cell height (where N is an integer greater than one). A diffusion wiring (102) made from a doping diffusion region is formed below a power supply metal wiring (101) of the second cell (CL2). The first cell (CL1) comprises a transistor diffusion region (D_MP23) which is formed facing the diffusion wiring (102) so as to bridge a lengthened region in the cell width direction of the metal wiring (101). The diffusion wiring (102) is positioned separate from the cell interface (BL1) in the cell width direction.
