SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

Provided are: a sputtering target having superior machine workability and being able to produce a compound film primarily containing Cu and Ga; and a method for producing the sputtering target. The sputtering target has an elemental composition containing, with respect to all the metal elements in the sputtering target, 15-40 atom% of Ga and 0.1-5 atom% of Bi, the remainder comprising Cu and unavoidable impurities. The method for producing the sputtering target has a step for melting at least the elements Cu, Ga, and Bi as elemental substances or alloys containing at least two of said elements at 1050°C or higher to produce an ingot. Alternately, the method has: a step for producing a starting material powder having at least the elements Cu, Ga, and Bi as a powder of the elementary substances or of alloys containing at least two of said elements; and a step for hot working the starting material powder in a vacuum, an inert atmosphere, or a reducing atmosphere.