METHOD FOR MANUFACTURING SEMICONDUCTOR THICK METAL STRUCTURE

摘要

A method for manufacturing a semiconductor thick metal structure, comprising a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti-TiN laminated structure is used as an antireflection layer to implement 4um metal corrosion without residue. In the metal patterning step, N2 is used for the protection of a sidewall to implement on a 4um metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4um metal concave-convex structure. A half-filled passivated filling structure is used to implement effective passication protection of 1.5um metal gaps having less than 4um of metal thickness. Manufacturing of the 4um thick metal structure having a linewidth/gap of 1.5um/1.5um is finally implemented.