TRANSISTOR, TRANSISTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE INCLUDING SUCH TRANSISTOR

摘要

Provided are a transistor (100), a transistor manufacturing method and a semiconductor device including said transistor. The transistor manufacturing method includes: providing a substrate (101) and forming a first insulation layer on the substrate (102); defining a first device area on the first insulation layer (103); forming a side-wall isolator surrounding the first device area on the first insulation layer (106); defining a second device area on the first insulation layer (107), with the second device area being isolated from the first device area via the side-wall isolator; and respectively forming a transistor structure in the first device area and the second device area. The transistor manufacturing method reduces the space required for isolation, reducing process complexity and lowering manufacturing costs.