THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE

摘要

[Problem] To provide a thin-film transistor having favorable properties by reducing an oxide semiconductor film in the length direction, and a method for manufacturing the same. [Solution] When a gate voltage that causes the electric field intensity in a gate insulating film (30) to be 1 MV/cm is applied to a gate electrode (20), the electrical channel length (Leff) of a thin-film transistor (TFT) is the sum of the length of a low reduction area (40b) and the length of a non-reduction area (40c). Thereby, the electrical channel length (Leff) is easily controlled such that the electrical channel length (Leff) can be set to an appropriate length, and thus a TFT having favorable properties can be obtained.