| 摘要 |
Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO2, HfBxOy, ZrO2, ZrBxOy, to a plasma comprising BCl3 and argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.
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| 申请人 |
APPLIED MATERIALS, INC.;XUE, JUN;LIU, JIE;CHEN, YONGMEI;MICHAELSON, TIMOTHY;DEATON, PAUL;WEIDMAN, TIMOTHY W.;NGAI, CHRISTOPHER S. |
发明人 |
XUE, JUN;LIU, JIE;CHEN, YONGMEI;MICHAELSON, TIMOTHY;DEATON, PAUL;WEIDMAN, TIMOTHY W.;NGAI, CHRISTOPHER S. |
