MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

摘要

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element (104) above a substrate, and fabricating a reversible- resistance switching element (102) cou- pled to the steering element by selectively fabricating carbon nano- tube ("CNT") material above the substrate, wherein the CNT material comprises a single CNT Numerous other aspects are provided.