| 摘要 |
958,537. Semi-conductor devices. SONY CORPORATION. Oct. 20, 1961 [Oct. 31, 1960], No. 37777/61. Heading H1K. In a process in which an impurity is alloyed to a semi-conductor body, to form for example a tunnel diode, heating is provided by supplying a hot inert gas to the materials and then cooling them by means of a gas supplied in place of the hot gas. This enables quick heating and cooling to be provided. In the Figure, a germanium or silicon body 1a with an indium or aluminium dot 1b lies on a thin heat-conducting plate 3. Heater 5 enables a supply of hot nitrogen to be directed on to plate 3 for 5 seconds or less to heat the body 1 up to 600‹ C., and it can be cooled in 3 seconds by a flow of gas which is supplied via cooling medium 7. |
