PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, PRODUCTION DEVICE FOR SEMICONDUCTOR DEVICE, AND STORAGE MEDIUM

摘要

The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the processing chamber at least atmospheric pressure; and an oxidation step for providing a processing fluid to the substrate from a processing fluid providing unit, and for oxidizing the silicon-containing film.