| 摘要 |
When a magnetic film on a substrate is etched by reactive ion beam etching during the production of a magnetic device, generation of particles and deterioration in process reproducibility, which are caused by a large amount of a carbon polymer that is produced at a plasma generation unit of an ion beam etching apparatus, are suppressed. In an ion beam etching apparatus, in addition to the introduction of a first carbon-containing gas into a plasma generation unit from a first gas introduction part, a second carbon-containing gas is separately introduced into a substrate processing space from a second gas introduction part, and reactive ion beam etching is performed. Consequently, a magnetic material is etched at a good etching rate with a good selectivity, while suppressing the formation of a carbon polymer at the plasma generation unit. |
