| 摘要 |
<p>The present invention relates to a transparent thin film, a light-emitting device comprising the same and to a method for manufacturing the same. A light-emitting device formed by a nitride semiconductor having a composition of AlxInyGa(1-x-y)N, (0<=x<=1, 0<=y<=1, 0<=x+y<=1) according to the present invention comprises: a substrate; a buffer layer formed on the substrate; a first electrode contact layer formed on the buffer layer; a first clad layer formed on the first electrode contact layer; an active layer formed on the first clad layer; a second clad layer formed on the active layer; a second electrode contact layer formed on the second clad layer; a transparent electrode which is formed on the second electrode contact layer and which has a multi-layer structure in which a plurality of ZnO thin films are stacked, wherein at least a portion of the ZnO thin films is doped with at least one n-type impurity selected from a group consisting of III family elements of B, Al, Ga and In and F, Cl and H, or doped with at least one p-type impurity selected from a group consisting of V family elements of N, P, As and Sb and Li, Na and C, or doped with both said n-type impurity and said p-type impurity; a first electrode pad formed on a portion of an upper surface of the first electrode contact layer; and a second electrode pad formed on a portion of an upper surface of the transparent electrode.</p> |
