| 摘要 |
<p>This semiconductor device is provided with an HEMT (10, 20-21, 30-32), and a diode (60, 70). The HEMT has: a substrate (10) that includes a GaN layer (13), which is a channel layer where a two-dimensional electron gas is generated, and an AlGaN layer (14), which is a barrier layer on the GaN layer; a source electrode (30), which is formed on the AlGaN layer and in ohmic contact with the AlGaN layer; a drain electrode (31), which is provided on the AlGaN layer by being spaced apart from the source electrode, and is in ohmic contact with the AlGaN layer; interlayer insulating films (20, 21), which are formed on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode (32), which is formed on the interlayer insulating film. The substrate has an active layer region (40) where the two-dimensional electron gas is generated in the GaN layer. The diode has an anode electrically connected to the gate electrode, and a cathode electrically connected to the drain electrode.</p> |
