| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor element and an inverter device which improve the cooling efficiency of the power semiconductor element, deals with improvement of the current-carrying capacity and downsizing, and is excellent in manufacturability. <P>SOLUTION: In an inverter device, power semiconductor elements of the respective phases are bonded on a heat radiation plate 22 using insulation resin sheets 36, 42, 43. A semiconductor chip, which is joined between a W phase positive side conductor 33 and a W phase first AC side conductor 35, transmits heat generated therein from both surfaces to the heat radiation plate 22 via the W phase positive side conductor 33 and the W phase first AC side conductor 35 thereby being cooled through the heat radiation plate 22. <P>COPYRIGHT: (C)2013,JPO&INPIT |
