发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.
|
申请公布号 |
US2013113005(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213669179 |
申请日期 |
2012.11.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WAN HO;CHOI SEUNG WOO;SONG SANG YEOB;SOHN JONG RAK |
分类号 |
H01L33/10 |
主分类号 |
H01L33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|